Instrumentation for SEM and FIB:
Scanning Electron Microscopy (SEM) and Focussed Ion Beam (FIB)
Mike Marshall |
Jim Mabon |
Location
B60 Materials Research Laboratory
General
This instrument is a combination of a high-resolution field emission scanning
electron microscope (FE-SEM) and a scanning metal ion beam microscope. It provides
significant new capabilities for microscopic imaging, nanofabrication, and site-selective
TEM sample preparation.
Microscopic Imaging:
The SEM column is equipped with a Schottky thermal field emission gun that provides
a resolution < 2.5 nm for accelerating voltages between 0.2 to 30 keV. The up to 30 keV
ion column with a gallium metal ion source provides currents ranging from 1 pA to 40 nA.
In ion beam imaging (secondary electrons) the resolution is 7 nm @ 1 pA beam current. The
concurrent use of the ion and electron microscopes has an synergistic effect and significantly
expands the capabilities of both.
Nanofabrication:
The DB-FIB is a fabrication tool with which researchers can build devices
on a nanoscale. Using the Ga ion beam one can remove material (etch) from the surface in a
controlled pattern. Furthermore, using electron or ion beam assisted CVD, it is possible to
selectively deposit Platinum metal with line-widths down to several nanometers. The dimension
of the lines can be further controlled by selective removal/etching with the ion beams.
TEM SAMPLE PREPARATION:
The combination of high-resolution imaging with controlled
etching allows the user to identify areas of interest on a sample and prepare site specific
cross-sectional or plan view TEM samples. An in-situ micromanipulator allows the TEM sample
to be extracted, mounted and thinned on a grid for analysis in the TEM.